The expanded lineup are designed to run without interruption at junction temperatures as high as 175°C. Credit: Ju Jae-young/Shutterstock.com. US-based semiconductor manufacturer Diodes has added new ...
Abstract: We present the 1-control-transistor and 1-source/channel/drain-diode(1T1D) one-time-programm- able (OTP) memory cells implemented in 14-nm complementary fin ...
The purpose of this activity is to investigate the forward and reverse current vs. voltage characteristics of an MOS field effect transistor (NMOS and PMOS) connected as a diode. The waveform ...
The fun part about logic gates is that there are so many ways to make them, with each approach having its own advantages and disadvantages. Although these days transistor-transistor logic (TTL) is the ...
This library is designed to work with the Arduino IDE versions 1.8.x or later; we have not tested it with earlier versions. This library should support any Arduino-compatible board, including the ...
Abstract: A 700-V normally-off p -GaN gate power transistor with distributed built-in Schottky barrier diode (SBD) is demonstrated in this work. The transistor cell and diode cell are alternately ...
Medium-voltage CoolGaN G5 transistors from Infineon include a built-in Schottky diode to minimize dead-time losses and enhance system efficiency. The integrated diode also streamlines power stage ...
Infineon Technologies AG has introduced the world’s first gallium nitride (GaN) power transistors with integrated Schottky diode for industrial use. The product family of medium-voltage CoolGaN ...
Infineon’s CoolGaN™ Transistors with integrated Schottky diode enhance power system performance by minimizing dead time-related losses. Infineon Technologies AG has launched the world’s first gallium ...
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