Abstract: CDM ESD events can be a potential threat to SoC designs or heterogeneous 3D ICs with multiple power domains. Inter-layer (or interface) circuits may need a local CDM ESD clamp that can ...
Abstract: Gate-grounded n-channel MOSFET (GGNMOS) has been widely used in electrostatic discharge (ESD) protection applications. In this letter, an enhanced GGNMOS, called the EGGNMOS, is proposed and ...
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