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Abstract: As the feature size of dynamic random access memories (DRAM) continues to scale down, the shrunk storage capacitors have met essential challenges, namely, the insufficient capacitances and ...
Abstract: This article reports the time-dependent dielectric breakdown (TDDB) reliability of zirconia (ZrO2)-based MIM capacitors with sub-0.7-nm equivalent oxide thicknesses (EOT). Results indicate ...
School of Materials Science & Engineering and Tianjin Key Laboratory of Materials Laminating Fabrication and Interface Control Technology, Hebei University of Technology, Tianjin300130, China ...
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