Abstract: This paper presents an in-depth analysis of fast Bias Temperature Instability (BTI) and Time-Dependent Dielectric Breakdown (TDDB) in DRAM CMOS periphery devices, focusing on NMOS and PMOS ...
Abstract: In the course of Cu/low-k technology development and qualification, low-k time-dependent dielectric breakdown (TDDB) is rapidly becoming one of the most important reliability issues. In ...
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