A breakthrough deal to attempt to limit global temperature rises was agreed at a conference of world nations in December 2015. These charts from the time show how and why the Earth’s climate is ...
Abstract: Stabilizing the CMOS-compatible low-temperature Au-free GaN Ohmic contact is a critical work that determines the performance and yield of GaN power HEMTs in mass production. The instability ...
Abstract: This article studies the short-circuit (SC) failure modes and mechanism of ohmic-gate GaN high electron mobility transistors (HEMTs) through experimental evaluation and numerical ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback