Abstract: This study quantifies the correlations between crack evolution and electrical performance degradation of the Al metallization in insulated gate bipolar transistor (IGBT) modules. The ...
Abstract: A novel High-Aspect-Ratio (HAR) dielectric etch technology which is capable of etching beyond $10 \mu \mathrm{m}$ depth memory channel hole for future generations of 3D NAND flash memory has ...
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