IEEE

Impact of the Endurance Measurement Methodology on Ferroelectric Field Effect Transistor Under the Capacitive Nondestructive Read

Abstract: In this article, the impact of the measurement delay and connection to the body contact on the reliability of the ferroelectric field effect transistor (FeFET) under the capacitive ...
IEEE

A Scalable Physics-Based Compact Model for Terminal Charge, Intrinsic Capacitance and Drain Current in Nanosheet Field Effect Transistors

Abstract: This study introduces a physics-based, SPICE-compatible model for Nanosheet Field-Effect Transistors (NsFETs) that offers explicit expressions for the drain current, terminal charges, and ...
Semiconductor Engineering

SiGeSn SBFETs at Cryogenic Temperatures (Tu Wien et al)

A new technical paper titled “A Cryogenic Ultra-Thin Body SiGeSn Transistor” was published by researchers at TU Wien, ...