Abstract: This paper presents the design of a new topology for an Overcurrent Protection (OCP) Integrated Circuit (IC), developed entirely in p-Gallium Nitride (p-GaN) technology using only ...
Abstract: A cost-efficient electrostatic discharge (ESD) protection solution for the gate-to-source terminal of GaN-based power high-electron-mobility transistors (HEMTs) is proposed. High ESD ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback