Abstract: Designing devices with memristor arrays requires simultaneous simulations of a large number of memristors. The use of detailed physical models limits the size of memristor arrays during ...
Abstract: A novel, large-signal behavioral modeling methodology for Gallium Nitride (GaN) high-electron-mobility transistors (HEMTs), based on the canonical piecewise-linear (CPL) functions, is ...
The Hitachi S4000 Field Emission Scanning Electron Microscope (FESEM) with IXRF Energy-dispersive X-ray Spectrometer (EDS) is a cold field emission SEM that is fast and easy to use. Good for ...
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