A collaborative European research team led by physicists from Slovak Academy of Sciences has theorized a new approach to control spin currents in graphene by coupling it to a ferroelectric In 2 Se 3 ...
An ultrathin ferroelectric capacitor, designed by researchers from Japan, demonstrates strong electric polarization despite ...
Helping engineering teams overcome integration, durability, and safety hurdles in harsh environments By Paulius Juskevicius, ...
An ultrathin ferroelectric capacitor demonstrates strong electric polarization despite being just 30 nm thick including top ...
Researchers visualized two spin-switching modes in an antiferromagnet, revealing a fast, low-heat mechanism that could enable ultrafast, non-volatile magnetic memory. (Nanowerk News) A research team ...
Researchers from the Agency for Science, Technology and Research (A*STAR) and National University of Singapore harnessed skyrmions to build a switch that has the potential to process data faster while ...
The three-level, three-phase SiC AC-DC architecture. T-type inverter and T-Type inverter with SiC MOSFETs topologies. Totem-pole topology implemented with SiC or GaN. High power density has steadily ...
What are GaN HEMTs and why are they important? How GaN devices can handle kilowatt power conversion. Gallium-nitride (GaN) high electron mobility transistors (HEMTs) are a form of field-effect ...
Note: This article references the 2017 NEC because the Philadelphia area — the jurisdiction where this author teaches and works— is still operating under that version of the Code. Electrical switches ...
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